MBR3100(2003) 데이터 시트보기 (PDF) - ON Semiconductor
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MBR3100 Datasheet PDF : 4 Pages
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MBR3100
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (see Note 2, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TL = 25°C)
(iF = 3.0 Amps, TL = 100°C)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL = 25°C
TL = 100°C
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Symbol
RθJA
Symbol
vF
iR
Max
28
Max
0.79
0.69
0.6
20
Unit
°C/W
Unit
V
mA
50
30
20
10
TJ = 150°C
5
100°C
3
25°C
2
1
0.5
0.3
0.2
0.1
0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
8
7
6
5
dc
4
SQUARE
3
WAVE
2
1
0
20 40 60 80 100 120 140 160 180
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 per Note 2)
1
0.5
0.2
TJ = 150°C
0.1
0.05
125°C
0.02
0.01
100°C
0.005
0.002
0.001
0.0005
0.0002
25°C
0.0001
0
10 20 30 40 50 60 70 80 90 100
VR REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
4
3.5
3
2.5
SQUARE
2
WAVE
dc
1.5
1
0.5
0
1.0
2.0
3.0
4.0
5.0
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
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