IRF1404ZLPBF 데이터 시트보기 (PDF) - International Rectifier

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IRF1404ZLPBF

HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)

International Rectifier 

IRF1404Z/S/LPbF

8000

6000

4000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

2000

Coss

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID= 75A

16

VDS= 32V

VDS= 20V

12

8

4

0

0

40

80

120

160

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000.0

100.0 TJ = 175°C

10000

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10.0

TJ = 25°C

1.0

0.1

0.2

VGS = 0V

0.6

1.0

1.4

1.8

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

100µsec

10

1msec

Tc = 25°C

Tj = 175°C

Single Pulse

1

0

1

10msec

10

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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