IPP26CN10N 데이터 시트보기 (PDF) - Infineon Technologies
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IPP26CN10N Datasheet PDF : 13 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
100 °C 25 °C
10
150 °C
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G IPU25CN10N G
14 Typ. gate charge
V GS=f(Q gate); I D=35 A pulsed
parameter: V DD
12
50 V
10
20 V
80 V
8
6
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
1000
0
0
5
10
15
20
25
Q gate [nC]
16 Gate charge waveforms
115
V GS
Qg
110
105
100
V g s(th)
95
90
-60 -20
20
60 100 140 180
T j [°C]
Q g (th)
Q gs
Rev. 1.01
page 7
Q sw
Q gd
Q gate
2006-06-02
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