HYB5118160BSJ-60 데이터 시트보기 (PDF) - Siemens AG

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HYB5118160BSJ-60

1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)

Siemens AG 

HYB 5118160BSJ-50/-60

HYB 3118160BSJ-50/-60

1M × 16 DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Access time from CAS precharge

RAS pulse width

CAS precharge to RAS Delay

tCPA

tRAS

tRHPC

–

30 –

35 ns 7

50 200k 60 200k ns

30 –

35 –

ns

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle time

CAS precharge to WE

tPRWC

71 –

80 –

ns

tCPWD

48 –

55 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

CAS hold time

RAS to CAS precharge time

Write to RAS precharge time

Write hold time referenced to RAS

tCSR

tCHR

tRPC

tWRP

tWRH

10 –

10 –

ns

10 –

10 –

ns

5

–

5

–

ns

10 –

10 –

ns

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 –

40 –

ns

Semiconductor Group

9

1998-10-01

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