HYB3164805J 데이터 시트보기 (PDF) - Siemens AG

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HYB3164805J

8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Siemens AG 

HYB3164(5)805J/T(L)-50/-60

8M x 8 EDO-DRAM

AC Characteristics (cont’d) 5)6)

TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns

Parameter

Symbol

Limit Values

-50

-60

min. max. min. max.

Test Mode

Write command setup time

Write command hold time

tWTS

10

–

tWTH

10

–

10

–

10

–

Unit Note

ns 18)

ns 18)

Semiconductor Group

160

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