HFA15TB60 데이터 시트보기 (PDF) - Vishay Semiconductors
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HFA15TB60 Datasheet PDF : 6 Pages
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HFA15TB60/HFA15TB60-1
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
IF = 15 A
-
Maximum forward voltage
VFM
IF = 30 A
See fig. 1
-
IF = 15 A, TJ = 125 °C
-
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
-
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
19
-
42
-
74
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/µs
VR = 200 V
-
4.0
-
6.5
-
84
-
241
Peak rate of fall of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
188
-
160
MAX.
-
60
120
6.0
10
180
600
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and gerased
Weight
Mounting torque
Marking device
Case style TO-220AC
Case style TO-262
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA15TB60
HFA15TB60-1
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93063
Revision: 30-Jul-08
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