FX6ASJ-03-T13(2004) 데이터 시트보기 (PDF) - Renesas Electronics

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FX6ASJ-03-T13
(Rev.:2004)

High-Speed Switching Use Pch Power MOS FET

Renesas Electronics 

FX6ASJ-03

High-Speed Switching Use

Pch Power MOS FET

Features

• Drive voltage : 4 V

• VDSS : – 30 V

• rDS(ON) (max) : 0.29 Ω

• ID : – 6 A

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 40 ns

Outline

MP-3A

3

4

12 3

1

REJ03G0247-0100

Rev.1.00

Aug.20.2004

1. Gate

2. Drain

3. Source

4. Drain

2, 4

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Ratings

–30

±20

–6

–24

–6

–6

–24

20

– 55 to +150

– 55 to +150

0.32

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 30 µH

A

A

W

°C

°C

g

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

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