D44T1 데이터 시트보기 (PDF) - Inchange Semiconductor

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D44T1

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

D44T1/2

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V (Min)

·High Switching Speed

·Low Saturation Voltage

APPLICATIONS

·Designed for general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCES

Collector-Emitter Voltage

VBE=0

300

VCEO

Collector-Emitter Voltage

250

UNIT

V

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

ICM

Collector Current-Peak

4

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

0.5

A

31.2

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

4 ℃/W

isc Website：www.iscsemi.cn

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