FEP16BT 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FEP16BT Datasheet PDF : 3 Pages
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FEP16AT - FEP16JT
PIN 1
+
PIN 3
CASE
PIN 2
Positive CT
Features
• Low forward voltage drop.
• High surge current capacity.
• High current capability.
• High reliability.
1
2
3
TO-220AB
Fast Rectifiers (Glass Passivated)
PIN 1
-
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
PIN 1
PIN 3
Doubler
Suffix "D"
AC
CASE
PIN 2
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VRRM
IF(AV)
IFSM
Tstg
TJ
Parameter
Value
16AT 16BT 16CT 16DT 16FT 16GT
Maximum Repetitive Reverse
Voltage
50 100 150 200 300 400
Average Rectified Forward Current,
.375 " lead length @ TA = 100°C
16
Non-repetitive Peak Forward Surge
Current
200
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
-55 to +150
Operating Junction Temperature
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
16HT
500
Units
16JT
600 V
A
A
°C
°C
Thermal Characteristics
Symbol
PD
RθJA
RθJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
8.33
15
2.2
Units
W
°C/W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
VF
trr
IR
CT
Parameter
Forward Voltage @ 8.0A
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
Total Capacitance
VR = 4.0. f = 1.0 MHz
Device
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
0.95
1.3
1.5
35
50
10
500
85
60
Units
V
ns
µA
µA
pF
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
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