BSM200GB120 데이터 시트보기 (PDF) - Siemens AG
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BSM200GB120 Datasheet PDF : 9 Pages
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BSM 200 GB 120 DL
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
400
A
IF
300
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
Diode
10 0
K/W
ZthJC 10 -1
250
Tj=125°C
Tj=25°C
200
150
100
50
0
0.0 0.5 1.0 1.5 2.0
V
3.0
VF
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
8
Feb-14-1997
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