BSM200GB120 데이터 시트보기 (PDF) - Siemens AG

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BSM200GB120

IGBT Power Module

Siemens AG 

BSM 200 GB 120 DL

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

V

VGE = VCE, IC = 8 mA

4.5

5.5

6.5

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 200 A, Tj = 25 °C

-

2.2

2.6

VGE = 15 V, IC = 200 A, Tj = 125 °C

-

2.5

3

Zero gate voltage collector current

ICES

mA

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

-

-

10

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

-

-

-

Gate-emitter leakage current

IGES

nA

VGE = 20 V, VCE = 0 V

-

-

400

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 200 A

110

-

-

Input capacitance

Ciss

nF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

13

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

2

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

1

-

Semiconductor Group

2

Feb-14-1997

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