BCP68(2009) 데이터 시트보기 (PDF) - Unisonic Technologies

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BCP68
(Rev.:2009)

NPN SILICON TRANSISTOR

Unisonic Technologies 

BCP68

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (Open Emitter)

VCBO

32

V

Collector-Emitter Voltage (Open Base)

VCEO

20

V

Emitter-Base Voltage (Open Collector)

VEBO

5

V

Collector Current

DC

IC

1

A

Peak

ICM

2

A

Peak Base Current

Total Power Dissipation (Ta ≤ 25℃)

Junction Temperature

Operating Temperature

Storage Temperature

IBM

200

mA

PD

1.35

W

TJ

150

℃

TOPR

-45 ~ +150

℃

TSTG

-65 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Thermal Resistance From Junction To Ambient

SYMBOL

θJA

RATINGS

91

UNIT

℃/W

„ ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)

PARAMETER

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector Capacitance

Transition Frequency

DC Current Gain Ratio of the

Complementary Pairs

SYMBOL

TEST CONDITIONS

VCE(SAT) IC = 1A, IB =100mA

VBE

IC = 5mA, VCE = 10V

IC = 1A, VCE = 1V

ICBO

IE = 0, VCB = 25V

IE = 0, VCB = 25V, TJ = 150℃

IEBO IC = 0, VEB = 5V

IC = 5mA, VCE = 10V

hFE IC = 500mA, VCE = 1V

IC = 1A, VCE = 1V

CC IE = ie = 0, VCB = 5V, f = 1MHz

fT

IC = -10mA, VCE = -5V, f = 100MHz

hFE1

hFE2

|IC| = 0.5A, |VCE| = 1V

„ CLASSIFICATION OF hFE

MIN TYP MAX UNIT

500 mV

620

mV

1V

100 nA

10 µA

100 nA

50

85

375

60

48

pF

40

MHz

1.6

RANK

RANGE

16

100~250

25

160~375

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R207-008,D

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