BC337L-40-T92-K(2009) 데이터 시트보기 (PDF) - Unisonic Technologies

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BC337L-40-T92-K
(Rev.:2009)

NPN SILICON TRANSISTOR

Unisonic Technologies 

BC337/BC338

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

BC337

BC338

VCES

50

V

30

V

Collector-Emitter Voltage

BC337

BC338

VCEO

45

V

25

V

Emitter-Base Voltage

Collector Current (DC)

Collector Dissipation

Derate above 25°C

VEBO

IC

PC

5

V

800

mA

625

mW

5

mW/°C

Junction Temperature

TJ

125

°C

Operating Temperature

TOPR

-20 ~ +85

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

SYMBOL

RATINGS

Junction to Ambient

Junction to Case

θJA

200

θJc

83.3

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

UNIT

°C/W

°C/W

PARAMETER

Collector-Emitter Breakdown Voltage BC337

BC338

Collector-Emitter Breakdown Voltage BC337

BC338

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BC337

BC338

DC Current Gain

Collector-emitter saturation voltage

Base-emitter on voltage

Output Capacitance

Current gain bandwidth product

SYMBOL

TEST CONDITIONS

BVCEO IC=10mA, IB=0

BVCES IC=0.1mA, VBE=0

BVEBO

ICES

hFE1

hFE2

VCE(SAT)

VBE(ON)

Cob

fT

IE=0.1mA, IC=0

VCE=45V, IB=0

VCE=25V, IB=0

VCE=1V, IC=100mA

VCE=1V, IC=300mA

IC=500mA, IB=50mA

VCE=1V, IC=300mA

VCB=10V, IE=0, f=1MHz

VCE=5V, IC=10mA, f=50MHz

„ CLASSIFICATION OF hFE1

RANK

hFE1

16

100-250

25

160-400

MIN TYP MAX UNIT

45

V

25

V

50

V

30

V

5

V

2 100 nA

2 100 nA

100

630

60

0.7 V

1.2 V

12

pF

100

MHz

40

250-630

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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