BB202/DG,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BB202/DG,115 Datasheet PDF : 6 Pages
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NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB202
FEATURES
• Very steep C/V curve
• C0.2: 30.5 pF; C2.3: 9.5 pF
• C0.2 to C2.3 ratio: min. 2.5
• Very low series resistance
• Ultra small SMD plastic package.
APPLICATIONS
• Electronic tuning in FM radio
• Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB202 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD523 ultra
small SMD plastic package.
MARKING
TYPE NUMBER
BB202
MARKING CODE
L2
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handboo1k, 2 columns
2
MBK441
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
IF
Tstg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
MIN.
−
−
−55
−55
MAX.
6
10
+85
+85
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
CC-----dd---((--02--..--23--VV----))
capacitance ratio
CONDITIONS
VR = 6 V; see Fig.3
VR = 6 V; Tj = 85 °C; see
Fig 3
f = 100 MHz; C = 30 pF
VR = 0.2; f = 1 MHz;
see Fig.2 and Fig.4
VR = 2.3; f = 1 MHz;
see Fig.2 and Fig.4
f = 1 MHz
MIN.
−
−
−
28.2
7.2
2.5
TYP.
−
−
0.35
−
−
−
MAX.
10
100
UNIT
nA
nA
0.6
Ω
33.5
pF
11.2
pF
−
Rev. 02 - 3 January 2008
2 of 6
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