BAS85 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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BAS85 Datasheet PDF : 2 Pages
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BAS85
Silicon Schottky Barrier Diode
Characteristics (Tj = 25_C unless otherwise specified)
200
180 VR = 30 V
160
140
120
100
RthJA=
540K/W
PR–Limit
@100%VR
80
60
PR–Limit
@80%VR
40
20
0
25
50
75 100 125 150
15822
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
Tj = 150°C
Tj = 25°C
1
0.1
0
15824
0.5
1.0
1.5
VF – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25
15823
50
75 100 125 150
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15825
f=1MHz
1.0
10.0
VR – Reverse Voltage ( V )
100.0
Figure 4. Diode Capacitance vs. Reverse Voltage
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