BAS40-04 데이터 시트보기 (PDF) - Philips Electronics

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BAS40-04

Schottky barrier (double) diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier (double) diodes

Product specification

BAS40 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VR

IF

IFRM

IFSM

Tstg

Tj

Tamb

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

storage temperature

junction temperature

operating ambient temperature

tp ≤ 1 s; δ ≤ 0.5

tp < 10 ms

MIN. MAX. UNIT

−

40

V

−

120

mA

−

120

mA

−

200

mA

−65

+150 °C

−

150

°C

−65

+150 °C

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

CONDITIONS

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 40 mA

VR = 30 V; note 1; see Fig.4

VR = 40 V; note 1; see Fig.4

f = 1 MHz; VR = 0 ; see Fig.6

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT23 or SOT143B standard mounting conditions.

CONDITIONS

MAX. UNIT

380

mV

500

mV

1

V

1

µA

10

µA

5

pF

VALUE UNIT

500

K/W

1999 Apr 28

3

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