BAS40-04 데이터 시트보기 (PDF) - Transys Electronics Limited

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BAS40-04

SCHOTTKY DIODE

Transys Electronics Limited 

BAS40 SERIES SCHOTTKY DIODE

FEATURES

Power dissipation

PD:

200 mW (Tamb=25℃)

Forward Current

IF:

Reverse Voltage

200 m A

VR:

40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-23

2. 4

1. 3

Unit: mm

BAS40 Marking:43 BAS40-04 Marking:44 BAS40-05 Marking:45 BAS40-06 Marking:46

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Reverse breakdown voltage

V(BR)

IR= 100µA

40

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reverse recovery time

IR

VR=30V

VF

IF=1mA

IF=40mA

CD

VR=0V, f=1MHz

t rr

IF =10mA through IR=10mA

to IR=1mA

MAX

100

380

1000

5

5

UNIT

V

nA

mV

pF

nS

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