APTM100DU18T 데이터 시트보기 (PDF) - Advanced Power Technology
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APTM100DU18T Datasheet PDF : 6 Pages
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APTM100DU18T
Dual Common Source
MOSFET Power Module
VDSS = 1000V
RDSon = 180mΩ max @ Tj = 25°C
ID = 43A @ Tc = 25°C
D1
Q1
D2
Q2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1
S1
S
NT C1
G2
Features
• Power MOS 7® MOSFETs
S2
- Low RDSon
- Low input and Miller capacitance
NT C2
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G2
D2
S2
D1
S
D2
S1
S2
NTC2
G1
G2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1000
V
Tc = 25°C
43
Tc = 80°C
33
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30
V
180
mΩ
PD Maximum Power Dissipation
Tc = 25°C
780
W
IAR Avalanche current (repetitive and non repetitive)
25
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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