APT8024B2FLL 데이터 시트보기 (PDF) - Microsemi Corporation

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APT8024B2FLL

POWER MOS 7® FREDFET

Microsemi Corporation 

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Test Conditions

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 400V

ID = 31A @ 25°C

RESISTIVE SWITCHING

VGS = 15V

VDD = 400V

ID = 31A @ 25°C

RG = 0.6Ω

INDUCTIVE SWITCHING @ 25°C

VDD = 533V, VGS = 15V

ID = 31A, RG = 5Ω

INDUCTIVE SWITCHING @ 125°C

VDD = 533V VGS = 15V

ID = 31A, RG = 5Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

IS

Continuous Source Current (Body Diode)

ISM Pulsed Source Current 1 (Body Diode)

VSD Diode Forward Voltage 2 (VGS = 0V, IS = -31A)

dv/dt Peak Diode Recovery dv/dt 5

Reverse Recovery Time

trr

(IS = -31A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

Reverse Recovery Charge

Qrr

(IS = -ID 31A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

IRRM

Peak Recovery Current

(IS = -31A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol Characteristic

RθJC

RθJA

Junction to Case

Junction to Ambient

MIN

MIN

MIN

APT8024B2_LFLL

TYP MAX UNIT

4670

860

pF

155

160

24

nC

105

9

5

ns

23

4

645

525

µJ

1040

625

TYP MAX UNIT

31 Amps

124

1.3 Volts

18 V/ns

300

ns

600

2.0

µC

6.7

13

Amps

22

TYP MAX UNIT

0.22

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 2.00mH, RG = 25Ω, Peak IL = 31A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ -ID31A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.25

0.20

D = 0.9

0.7

0.15

0.10

0.05

0

10-5

0.5

Note:

0.3

0.1

0.05

SINGLE PULSE

t1

t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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