2SK3634 데이터 시트보기 (PDF) - KEXIN Industrial

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2SK3634

MOS Field Effect Transistor

KEXIN Industrial 

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK3634

Features

High voltage: VDSS = 200 V

Gate voltage rating: 30 V

RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 3.0 A)

Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)

Built-in gate protection diode

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Symbol

Rating

Unit

VDSS

200

V

VGSS

30

V

ID

6.0

A

Idp *

18

A

20

PD

W

1.0

Tch

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)

Ciss

Coss

Crss

ton

tr

toff

tf

QG

QGS

QGD

Testconditons

Min Typ Max Unit

VDS=200V,VGS=0

10

A

VGS= 30V,VDS=0

10

A

VDS=10V,ID=1mA

2.5 3.5 4.5 V

VDS=10V,ID=3.0A

2

4

S

VGS=10V,ID=3.0A

0.47 0.60

270

pF

VDS=10V,VGS=0,f=1MHZ

75

pF

33

pF

4

ns

8

ns

ID=3.0A,VGS(on)=10V,RG=0 ,VDD=100V

14

ns

6

ns

VDD = 160V

VGS = 10 V

ID = 6.0A

9

nC

1.5

nC

4.5

nC

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