2SD716 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SD716 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD716
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBE
Base-emitter voltage
IC=4A ; VCE=5V
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
MIN TYP. MAX UNIT
100
V
5
V
2.0
V
1.5
V
10
µA
10
µA
55
160
12
MHz
100
pF
hFE Classifications
R
O
55-110
80-160
2
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