SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Testconditons
IC=50ìA
IC=1mA
IE=50ìA
VCB=400V
VEB=6V
IC/IB=10mA/1mA
IC/IB=10mA/1mA
VCE=10V , IC=10mA
VCE=10V , IE=-10mA , f=10MHz
VCB=10V , IE=0A , f=1MHz
IC=-100mA RL=1.5kÙ
IB1=-IB2=10mA
VCC=-150V
Transistors
Product specification
2SC4505
Min Typ Max Unit
400
V
400
V
7
V
10 ìA
10 ìA
0.05 0.5 V
1.5 V
82
270
20
MHz
7
pF
1
µs
5.5
µs
1.7
µs
hFE Classification
TYPE
Rank
Marking
CEP
P
82 to 180
CEQ
Q
120 to 270
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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