2N6427 데이터 시트보기 (PDF) - Philips Electronics
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2N6427 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistor
Product specification
2N6427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
30
10
500
800
200
625
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
VBEon
fT
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
VBE = 0; IB = 0; VCE = 30 V
IC = 0; VEB = 10 V
VCE = 5 V; note 1
IC = 10 mA
IC = 100 mA
IC = 500 mA
IC = 50 mA; IB = 0.5 mA; note 1
IC = 500 mA; IB = 0.5 mA; note 1
IC = 500 mA; IB = 0.5 mA; note 1
IC = 50 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
−
−
−
−
10 000
20 000
14 000
−
−
−
−
125
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
100
10
100
100
UNIT
nA
µA
nA
nA
100 000
200 000
140 000
1 .2
1 .5
2
1.75
−
V
V
V
V
MHz
1997 Jul 04
3
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