2N5551L-A-T92-B 데이터 시트보기 (PDF) - Unisonic Technologies

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2N5551L-A-T92-B

NPN SILICON TRANSISTOR

Unisonic Technologies 

2N5551

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6

V

Collector Dissipation

Collector Dissipation

TO-92

625

mW

SOT-89

PC

500

mW

Collector Current

IC

600

mA

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0

180

Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0

160

Emitter-Base Breakdown Voltage

BVEBO IE=10µA, IC=0

6

Collector Cut-off Current

ICBO VCB=120V, IE=0

Emitter Cut-off Current

IEBO VBE=4V,IC=0

DC Current Gain(Note)

hFE1 VCE=5V, IC=1mA

80

hFE2 VCE=5V, IC=10mA

80

hFE3 VCE=5V, IC=50mA

80

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=10mA, IB=1mA

IC=50mA, IB=5mA

Base-Emitter Saturation Voltage

VBE(SAT)

IC=10mA, IB=1mA

IC=50mA, IB=5mA

Current Gain Bandwidth Product

fT VCE=10V, IC=10mA, f=100MHz 100

Output Capacitance

Cob VCB=10V, IE=0 f=1MHz

Noise Figure

NF

IC=0.25mA, VCE=5V

RS=1kΩ, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300µs, Duty cycle<2%

TYP

160

MAX

50

50

UNIT

V

V

V

nA

nA

400

0.15

V

0.2

1

1

V

300 MHz

6.0

pF

8

dB

CLASSIFICATION OF hFE

RANK

RANGE

A

80-170

B

150-240

C

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-002.B

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