2N5555 데이터 시트보기 (PDF) - Motorola => Freescale

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2N5555

JFET Switching

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

JFET Switching

N–Channel — Depletion

1 DRAIN

3

GATE

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by 2N5555/D

2N5555

2 SOURCE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain – Source Voltage

Drain – Gate Voltage

Gate – Source Voltage

Forward Gate Current

Total Device Dissipation @ TC = 25°C

Derate above 25°C

VDS

VDG

VGS

IGF

PD

25

Vdc

25

Vdc

25

Vdc

10

mAdc

350

mW

2.8

mW/°C

Junction Temperature Range

TJ

– 65 to +150

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V)

Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V, TA = 100°C)

ON CHARACTERISTICS

Zero – Gate –Voltage Drain Current(1)

(VDS = 15 Vdc, VGS = 0)

Gate–Source Forward Voltage

(IG(f) = 1.0 mAdc, VDS = 0)

Drain–Source On–Voltage

(ID = 7.0 mAdc, VGS = 0)

Static Drain–Source On Resistance

(ID = 0.1 mAdc, VGS = 0)

SMALL– SIGNAL CHARACTERISTICS

V(BR)GSS

IGSS

ID(off)

IDSS

VGS(f)

VDS(on)

rDS(on)

Small–Signal Drain–Source “ON” Resistance

(VGS = 0, ID = 0, f = 1.0 kHz)

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

rds(on)

Ciss

Crss

Turn–On Delay Time

Rise Time

(VDD = 10 Vdc, ID(on) = 7.0 mAdc,

VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID(on) = 7.0 mAdc,

VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.

td(on)

tr

td(off)

tf

1

2

3

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

Min

Max

Unit

25

—

Vdc

—

1.0

nAdc

—

10

nAdc

—

2.0

µAdc

15

—

mAdc

—

1.0

Vdc

—

1.5

Vdc

—

150

Ohms

—

150

Ohms

—

5.0

pF

—

1.2

pF

—

5.0

ns

—

5.0

ns

—

15

ns

—

10

ns

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1997

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