2N5550 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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2N5550 Datasheet PDF : 2 Pages
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2N5550 / 2N5551
2N5550 / 2N5551
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-06-17
Power dissipation
Verlustleistung
Plastic case
CBE
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO
Emitter-Base-voltage – Emitter-Basis-Spannung
C open VEBO
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
2N5550
2N5551
140 V
160 V
160 V
180 V
6V
625 mW 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
hFE
2N5550 hFE
hFE
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
hFE
2N5551 hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
2N5550
2N5551
VCEsat
VCEsat
IC = 50 mA, IB = 5 mA
2N5550
2N5551
VCEsat
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
60
–
–
60
–
250
20
–
–
80
–
–
80
–
250
30
–
–
–
–
0.15 V
–
–
0.15 V
–
–
0.25 V
–
–
0.20 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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