2N439A 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2N439A

NPN HIGH FREQUENCY COMPUTER TRANSISTORS

New Jersey Semiconductor 

ELECTRICAL DATA

Min. Mode Max. Units

STATIC AND LARGE SIGNAL PARAMETERS

Collector cutoff current,

VCB = 25 V

2

10 jjiAdc

Collector cutoff current,

VCB = 6 V, TA = 75°C

150 nAdc

Emitter cutoff current, l£BO

VEB - 25 V

2

10 liAdc

Emitter cutoff current, IEBO

VEB = 6 V, TA = 75°C

150 jjiAdc

Collector-base breakdown voltage,

1C = 100 \iA

30

Vdc

Collector-emitter breakdown voltage, BVcEO

1C = 300 ^A

20

Vdc

Current gain, hp£

IC = 5 0 mA, VCE = 1.0 V

30

45

Input voltage, VEB

1C = 50 mA, VCE = 1.0 V

.32

.7 Vdc

Saturation resistance, Rg

1C = 50 mA

3

5 ohms

TYPICAL SWITCHING CHARACTERISTICS (Note 3)

Rise time, tr

.5

Fall time, tf

.3

Storage time, ts

.7

LOW FREQUENCY, SMALL SIGNAL PARAMETERS (Note 1)

Current gain, hfe

Input resistance, hib

Input resistance, hie

35

27

1500

HIGH FREQUENCY, SMALL SIGNAL PARAMETERS (Note 2)

Cutoff frequency, iab

Collector capacitance, Cc

Collector base time constant, rb'Cc

Extrinsic base resistance, rb'

5.0

9

2300

220

H.S

ohms

ohms

me

20

ohms

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