2N1613 데이터 시트보기 (PDF) - STMicroelectronics
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2N1613 Datasheet PDF : 5 Pages
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2N1613-2N1711
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
58
°C/W
Max
219
°C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICBO
IEBO
V(BR) CBO
Collector Cutoff Current
(IE = 0)
Emitter Cutoff Current
(IC = 0)
Collector-base Breakdown
Voltage
VCB = 60 V
VCB = 60 V
VEB = 5 V
IC = 0.1 mA
T amb = 150 °C
for 2N 16 13
for 2N 17 11
75
V(BR)CE R*
V(BR) EBO
V CE (s at )*
Collector-emitter
Breakdown Voltage
(R B E ≤ 10 Ω)
Emitter-base Breakdown
Voltage (IC = 0)
Collector-emitter
Saturation Voltage
IC = 10 mA
IE = 0.1 mA
IC = 150 mA
IB = 15 mA
50
7
0.5
VBE (s at) * Base-emitter Saturation
Voltage
IC = 150 mA
IB = 15 mA
0.95
hFE*
hFE*
hfe
DC Current Gain
for 2 N16 13
IC = 0.01 mA
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 10 mA
T amb = –55 °C
DC Current Gain
for 2 N17 11
IC = 0.01 mA
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 10 mA
T amb = 55 °C
Small Signal Current Gain
for 2 N16 13
IC = 1 mA
f = 1 kHz
for 2 N17 11
IC = 1 mA
f = 1 kHz
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
35
20
50
35
80
40
80
20
55
20
35
20
60
35
80
130
130
75
65
30
70
70
135
ft
Transition Frequency
I C = 50 mA
f = 20 MHz
VCE = 10 V
for 2N 16 13
for 2N 17 11
60
80
70
100
CEBO
Emitter-base Capacitance IC = 0
f = 1 MHz
VEB = 0.5 V
50
C CBO
Collector-base
Capacitance
IE = 0
f = 1 MHz
VCB = 10 V
18
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Max.
10
10
10
5
1.5
1.3
120
300
150
300
80
25
Unit
nA
µA
nA
nA
V
V
V
V
V
MHz
MHz
pF
pF
2/5
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