1PS70SB15 데이터 시트보기 (PDF) - Philips Electronics

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1PS70SB15

Schottky barrier (double) diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier (double) diodes

Product specification

1PS70SB10; 1PS70SB14;

1PS70SB15; 1PS70SB16

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

Tamb

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

total power dissipation (per package)

storage temperature

junction temperature

operating ambient temperature

tp ≤ 1 s; δ ≤ 0.5

tp < 10 ms

Tamb < 25 °C

MIN. MAX. UNIT

−

30

V

−

200 mA

−

300 mA

−

600 mA

−

200 mW

−65 +150 °C

−

125 °C

−65 +125 °C

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

continuous forward voltage

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

CONDITIONS

MAX.

UNIT

see Fig.6

IF = 0.1 mA

240

mV

IF = 1 mA

320

mV

IF = 10 mA

400

mV

IF = 30 mA

500

mV

IF = 100 mA

800

mV

VR = 25 V; note 1; see Fig.7

2

µA

VR = 1 V; f = 1 MHz; see Fig.8 10

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT323 (SC70) standard mounting conditions.

VALUE

625

UNIT

K/W

1999 Apr 26

3

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