AD5222–SPECIFICATIONS (VDD = 3 V ؎ 10% or 5 V ؎ 10%, VSS = 0 V, VA = +VDD, VB = 0 V, –40؇C < TA < +85؇C,
unless otherwise noted.)
Parameter
Symbol Condition
Min Typ1 Max Unit
DC CHARACTERISTICS RHEOSTAT MODE (Specifications Apply to All VRs)
Resistor Differential NL2
Resistor Nonlinearity2
Nominal Resistor Tolerance
Resistance Temperature Coefficient
Wiper Resistance3
Nominal Resistance Match
R-DNL
R-INL
∆R
RAB/∆T
RW
∆R/RO
RWB, VA = NC
RWB, VA = NC
VAB = VDD, Wiper = No Connect, TA = 25°C
VAB = VDD, Wiper = No Connect
IW = VDD/R, VDD = 3 V or 5 V
CH 1 to 2, VAB = VDD, TA = 25°C
DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE (Specifications Apply to All VRs)
Resolution
N
Integral Nonlinearity4
Differential Nonlinearity4
INL
INL
DNL
RAB = 10 kΩ, 50 kΩ, or 100 kΩ
RAB = 1 MΩ
Voltage Divider Temperature Coefficient ∆VW/∆T
Full-Scale Error
VWFSE
Code = 40H
Code = 7FH
Zero-Scale Error
VWZSE
Code = 00H
RESISTOR TERMINALS
Voltage Range5
Capacitance6 A, B
Capacitance6 W
Common-Mode Leakage
VA, B, W
CA, B
CW
ICM
f = 1 MHz, Measured to GND, Code = 40H
f = 1 MHz, Measured to GND, Code = 40H
VA = VB = VW
DIGITAL INPUTS AND OUTPUTS
Input Logic High
VIH
Input Logic Low
VIL
Input Current
IIL
Input Capacitance6
CIL
VDD = 5 V/3 V
VDD = 5 V/3 V
VIN = 0 V or 5 V
–1
±1/4 +1
LSB
–1
±0.4 +1
LSB
–30
+30 %
–35
ppm/°C
45 100 Ω
0.2 1
%
7
Bits
–1
±1/4 +1
LSB
–2
±1/2 +2
LSB
–1
±1/4 +1
LSB
20
ppm/°C
–1 –0.5 +0 LSB
0
0.5 1
LSB
VSS
VDD V
45
pF
60
pF
1
nA
2.4/2.1
5
V
0.8/0.6 V
±1
µA
pF
POWER SUPPLIES
Power Single-Supply Range
Power Dual-Supply Range
Positive Supply Current
Negative Supply Current
Power Dissipation7
Power Supply Sensitivity
VDD RANGE
VDD/SS RANGE
IDD
ISS
PDISS
PSS
VSS = 0 V
VIH = 5 V or VIL = 0 V
VSS = –2.5 V, VDD = +2.7 V
VIH = 5 V or VIL = 0 V, VDD = 5 V
2.7
5.5 V
± 2.3
±2.7 V
15 40
µA
15 40
µA
150 400 µW
0.002 0.05 %/%
DYNAMIC CHARACTERISTICS6, 8, 9
Bandwidth –3 dB
Total Harmonic Distortion
VW Settling Time
Resistor Noise Voltage
BW_10K
BW_50K
BW_100K
BW_1M
THDW
tS
eN_WB
RAB = 10 kΩ, Code = 40H
RAB = 50 kΩ, Code = 40H
RAB = 100 kΩ, Code = 40H
RAB = 500 kΩ, Code = 40H
VA = 1 V rms + 2 V dc, VB = 2 V dc, f = 1 kHz
RAB = 10 kΩ, ± 1 LSB Error Band
RWB = 5 kΩ, f = 1 kHz
INTERFACE TIMING CHARACTERISTICS (Applies to All Parts)6, 10
Input Clock Pulsewidth
tCH, tCL
Clock Level High or Low
30
CS to CLK Setup Time
tCSS
20
CS Rise to CLK Hold Time
tCSH
20
U/D to Clock Fall Setup Time
tUDS
10
U/D to Clock Fall Hold Time
tUDH
30
DACSEL to Clock Fall Setup Time
tDSS
20
DACSEL to Clock Fall Hold Time
tDSH
30
MODE to Clock Fall Setup Time
tMDS
20
MODE to Clock Fall Hold Time
tMDH
40
1000
180
78
7
0.005
2
14
kHz
kHz
kHz
kHz
%
µs
nV√Hz
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
1Typicals represent average readings at 25°C, VDD = 5 V.
2Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions.
R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. See Figure 22 test circuit.
3Wiper resistance is not measured on the RAB = 1 MΩ models.
4INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V A = VDD and VB = 0 V. DNL
specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. See Figure 21 test circuit.
5Resistor Terminals A, B, W have no limitations on polarity with respect to each other.
6Guaranteed by design and not subject to production test.
7PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
8Bandwidth, noise and settling time are dependent on the terminal resistance value chosen. The lowest R value results in the fastest settling time and highest bandwidth.
The highest R value results in the minimum overall power consumption.
9All dynamic characteristics use VDD = 5 V.
10See timing diagram for location of measured values. All input control voltages are specified with t R = tF = 2.5 ns (10% to 90% of +3 V) and timed from a voltage level
of 1.5 V. Switching characteristics are measured using both VDD = 5 V or VDD = 3 V.
Specifications subject to change without notice.
–2–
REV. 0