CY8C4144FNQ-473 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY8C4144FNQ-473

Programmable System-on-Chip (PSoC®)

Cypress Semiconductor 

PSoC® 4: PSoC 4100 Family

Datasheet

Electrical Specifications

Absolute Maximum Ratings

Table 1. Absolute Maximum Ratings[1]

Spec ID# Parameter

Description

Min

SID1

SID2

SID3

SID4

SID5

BID44

BID45

BID46

VDDD_ABS

VCCD_ABS

VGPIO_ABS

IGPIO_ABS

IGPIO_injection

ESD_HBM

ESD_CDM

LU

Digital supply relative to VSSD

Direct digital core voltage input relative

to Vssd

GPIO voltage

Maximum current per GPIO

GPIO injection current, Max for VIH >

VDDD, and Min for VIL < VSS

Electrostatic discharge human body

model

Electrostatic discharge charged

device model

Pin current for latch-up

–0.5

–0.5

–0.5

–25

–0.5

2200

500

–200

Typ Max Units

Details/

Conditions

–

6

–

1.95

V Absolute max

V Absolute max

–

VDD+0.5

V

Absolute max

–

25

mA Absolute max

–

0.5

mA Absolute max, current

injected per pin

–

–

V

–

–

V

–

200

mA

Device-Level Specifications

All specifications are valid for -40 °C  TA  105 °C and TJ  125 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,

except where noted.

Table 2. DC Specifications

Spec ID# Parameter

Description

Min Typ

SID53

SID255

SID54

SID55

SID56

VDD

VDDD

VCCD

CEFC

CEXC

Power Supply Input Voltage (VDDA =

1.8

–

VDDD = VDD)

Power Supply Input Voltage unregu-

1.71

1.8

lated

Output voltage (for core logic)

–

1.8

External Regulator voltage bypass

1

1.3

Power supply decoupling capacitor

–

1

Active Mode, VDD = 1.71 V to 5.5 V. Typical Values measured at VDD = 3.3 V

SID9

IDD4

Execute from Flash; CPU at 6 MHz

–

–

SID10 IDD5

Execute from Flash; CPU at 6 MHz

–

2.2

SID12 IDD7

Execute from Flash; CPU at 12 MHz,

–

–

SID13 IDD8

Execute from Flash; CPU at 12 MHz

–

3.7

SID16 IDD11

Execute from Flash; CPU at 24 MHz

–

6.7

SID17 IDD12

Execute from Flash; CPU at 24 MHz

–

–

Sleep Mode, VDD = 1.7 V to 5.5 V

SID25 IDD20

I2C wakeup, WDT, and Comparators

–

1.3

on. 6 MHz.

SID25A IDD20A

I2C wakeup, WDT, and Comparators

–

1.7

on. 12 MHz.

Deep Sleep Mode, VDD = 1.8 V to 3.6 V (Regulator on)

SID31 IDD26

I2C wakeup and WDT on.

SID32 IDD27

I2C wakeup and WDT on.

–

1.3

–

–

Max Units

Details/

Conditions

5.5

V With regulator enabled

1.89

V Internally unregulated

Supply

–

V

1.6

µF X5R ceramic or better

–

µF X5R ceramic or better

2.8

mA

–

mA T = 25 °C

4.2

mA

–

mA T = 25 °C

–

mA T = 25 °C

7.2

mA

1.8

mA VDD = 1.71 to 5.5 V

2.2

mA VDD = 1.71 to 5.5 V

–

µA T = 25 °C

45

µA T = 85 °C

Note

1. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to absolute maximum conditions for extended

periods of time may affect device reliability. The maximum storage temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature

Storage Life. When used below absolute maximum conditions but above normal operating conditions, the device may not operate to specification.

Document Number: 001-87220 Rev. *J

Page 18 of 43

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