ZXTD4591E6TC 데이터 시트보기 (PDF) - Zetex => Diodes

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ZXTD4591E6TC

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

Zetex => Diodes 

ZXTD4591E6

NPN

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO 80

V

IC=100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO 60

V

IC=10mA*

Emitter-Base Breakdown Voltage V(BR)EBO 5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

100

Ratio

100

80

30

Transition Frequency

fT

150

100

100

100

0.25

0.5

1.1

1.0

300

V

nA

nA

nA

V

V

V

V

MHz

IE=100␮A

VCB=60V

VEB=4V

VCES=60V

IC=500mA, IB=50mA*

IC=1A, IB=100mA*

IC=1A, IB=100mA*

IC=1A, VCE=5V*

IC=1mA, VCE=5V*

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

10

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

ISSUE 1 - JULY 2000

4

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