26NM60ND 데이터 시트보기 (PDF) - STMicroelectronics

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26NM60ND

N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

Test circuits

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND

3

Test circuits

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

μF

D.U.T.

3.3

μF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

μF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 20. Test circuit for inductive load

switching and diode recovery times

Figure 21. Unclamped inductive load test circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

G

RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

AM01470v1

Figure 22. Unclamped inductive waveform

V(BR)DSS

VD

Pw

AM01471v1

Figure 23. Switching time waveform

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

10/23

DocID025283 Rev 1

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