KSC5502D 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSC5502D

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Typical Performance Characteristics

3

1A

900mA

800mA

700m A

600mA

500mA

2

400mA

300mA

200mA

I =100mA

B

1

0

0

1

2

3

4

5

6

7

V [V], COLLECTOR EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

100

10

T =125oC

J

T =25oC

J

V =1V

CE

1

1m

10m

100m

1

I [A], COLLECTOR CURRENT)

C

Figure 2. DC Current Gain

I =5I

C

B

10

I =10I

C

B

10

1

T =125oC

J

T =25oC

J

0.1

1m

10m

100m

1

I (A), COLLECTOR CURRENT

C

Figure 3. Collector-Emitter Saturation Voltage

2

T =25oC

J

1

0.4A

I =0.2A

C

1.5A

1.0A

2.0A

0

1m

10m

100m

1

I [A], BASE CURRENT

B

Figure 5. Typical Collector Saturation Voltage

1

T =125oC

J

T =25oC

J

0.1

1m

10m

100m

1

I (A), COLLECTOR CURRENT

C

Figure 4. Collector-Emitter Saturation Voltage

10

I =10I

C

B

1

T =25oC

J

T =125oC

J

0.1

1m

10m

100m

1

I [A], COLLECTOR CURRENT

C

Figure 6. Base-Emitter Saturation Voltage

© 2000 Fairchild Semiconductor Corporation

KSC5502D / KSC5502DT Rev. 1.1.0

4

www.fairchildsemi.com

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