ZXT10P12DE6 데이터 시트보기 (PDF) - Diodes Incorporated.
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ZXT10P12DE6 Datasheet PDF : 7 Pages
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A Product Line of
Diodes Incorporated
ZXT10P12DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
-12
BVCEO
-12
BVEBO
-7
ICBO
IEBO
ICES
300
300
hFE
180
60
45
VCE(sat)
VBE(sat)
VBE(on)
fT
80
Cobo
t(on)
t(off)
Typ
Max
-35
-25
-8.5
<1
-100
<1
-100
<1
-100
475
450
275
100
70
-10
-100
-100
-195
-0.90
-0.85
-17
-140
-150
-300
-0.95
-0.90
110
21
30
70
130
Note: 9. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
Unit
Test Condition
V IC = -100µA
V IC = -10mA
V IE = -100µA
nA VCB = -10V
nA VEB = -4V
nA VCES = -10V
IC = -10mA, VCE = -2V
IC = -0.1A, VCE = -2V
IC = -2.5A, VCE = -2V
IC = -8.0A, VCE = -2V
IC = -10A, VCE = -2V
IC = -0.1A, IB = -10mA
mV IC = -1.0A, IB = -10mA
IC = -1.5A, IB = -50mA
IC = -3.0A, IB = -50mA
V IC = -3.0A, IB = -50mA
V IC = -3.0A, VCE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 100MHz
VCB = -10V, f = 1MHz
VCC = -6V, IC = -2A
IB1 = -IB2 = -50mA
ZXT10P12DE6
Document Number: DS33624 Rev: 2 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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