ZXM64P035 데이터 시트보기 (PDF) - Zetex => Diodes

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ZXM64P035

35V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM64P035L3

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -35

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th) -1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

DYNAMIC (3)

gfs

2.3

V

-1

␮A

Ϯ100 nA

V

0.075 ⍀

0.105 ⍀

S

ID=-250µA, VGS=0V

VDS=-35V, VGS=0V

VGS=Ϯ20V, VDS=0V

ID=-250␮A, VDS= VGS

VGS=-10V, ID=-2.4A

VGS=-4.5V, ID=-1.2A

VDS=-10V,ID=-1.2A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

825

pF

VDS=-25V, VGS=0V,

250

pF f=1MHz

80

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

4.4

ns

6.2

ns

40

ns

29.2

ns

46

nC

9

nC

11.5 nC

VDD =-15V, ID=-2.4A

RG=6.0⍀, VGS=-10V

VDS=-24V,VGS=-10V,

ID=-2.4A

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

VSD

trr

Qrr

-0.95 V

30.2

ns

27.8

nC

TJ=25ЊC, IS=-2.4A,

VGS=0V

TJ=25ЊC, IF=-2.4A,

di/dt= 100A/␮s

NOTES

(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JANUARY 2002

3

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