ZXM61N03FTA 데이터 시트보기 (PDF) - Zetex => Diodes

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ZXM61N03FTA

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM61N03F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance

(1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS 30

IDSS

IGSS

VGS(th) 1.0

RDS(on)

gfs

0.87

1

100

0.22

0.30

V

ID=250µA, VGS=0V

µA VDS=30V, VGS=0V

nA VGS=± 20V, VDS=0V

V

ID=250µA, VDS= VGS

Ω

VGS=10V, ID=0.91A

Ω

VGS=4.5V, ID=0.46A

S

VDS=10V,ID=0.46A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

150

pF

VDS=25 V, VGS=0V,

35

pF f=1MHz

15

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

1.9

ns

2.5

ns VDD =15V, ID=0.91A

5.8

ns

RG=6.2Ω, RD=16Ω

(refer to test

3.0

ns circuit)

4.1

0.4

0.63

nC

V D S= 24 V , V GS= 1 0V ,

nC ID=0.91A

(refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

11.0

Reverse Recovery Charge (3)

Qrr

3.5

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

TJ=25°C, IS=0.91A,

V G S= 0V

ns TJ=25°C, IF=0.91A,

di/dt= 100A/µs

nC

ISSUE 1 - JUNE 2004

4

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