ZLLS400 데이터 시트보기 (PDF) - Zetex => Diodes

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ZLLS400

40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

Zetex => Diodes 

ZLLS400

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

SCHOTTKY DIODE CHARACTERISTICS

Reverse Breakdown Voltage V(BR)R 40

Forward Voltage

VF

Reverse Current

IR

Diode Capacitance

CD

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

310

350

425

520

610

690

860

494

5.5

370

15.5

2.46

1.38

V

350

mV

400

mV

520

mV

610

mV

850

mV

1000 mV

1300 mV

mV

10

␮A

mA

pF

ns

nC

IR=500µA

IF=50 mA*

IF=100 mA*

IF=250mA*

IF=400mA*

IF=750mA*

IF=1000mA*

IF=1500mA*

IF=500mA*,Ta = 100ЊC

VR=30V

VR=30V,Ta = 85ЊC

f=1MHz,VR=30V

Switched from IF = 500mA

to VR = 5V. Measured @ IR 50mA.

di / d t > 1A / ns.

Rsource = 6 ohm.

*Measured under pulsed conditions.

Operational Efficiency chart

The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring

higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will

benefit from using Zetex low VF ZHCS Series diodes.

ISSUE 1 - JANUARY 2002

4

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