WT2306 데이터 시트보기 (PDF) - Weitron Technology
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WT2306 Datasheet PDF : 6 Pages
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Surface Mount N-Channel
Enhancement Mode MOSFET
3 DRAIN
Features:
*Super high dense cell design for low R DS(ON)
RDS(ON) <70 mΩ @VGS =4.0V
RDS(ON) <95 mΩ @VGS =2.5V
*Rugged and Reliable
*SOT-23 Package
1
GATE
2
SOURCE
WT-2306
DRAIN CURRENT
2.8 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ =125 C)(1)
ID
Pulsed Drain Current (2)
IDM
Drain-Source Diode Forward Current (1)
IS
Power Dissipation (1)
Maximax Junction-to-Ambient
PD
R θJA
Value
20
-+8
2.8
12
1.25
1.25
100
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT2306=S06
Unite
V
V
A
A
A
W
C/W
C
WEITRON
http://www.weitron.com.tw
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