WFU2N60B 데이터 시트보기 (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU2N60B Datasheet PDF : 7 Pages
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Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFU2N60B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
2.0
1.3
8
±30
140
6.4
5.5
46
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
2.7
℃/W
0.5
-
-
℃/W
-
-
62.5
℃/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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