VSC7927KF 데이터 시트보기 (PDF) - Vitesse Semiconductor
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VSC7927KF Datasheet PDF : 12 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7927
SONET/SDH 2.5Gb/s Laser Diode Driver
Table 5: High Speed Inputs and ECL Outputs
Symbol
Parameter
Min Typ Max Units
Conditions
VIN
Single-ended Input Voltage Swing
300
—
1500 mVp-p VCM = -2.0V
VCM
Differential Input Common Mode Range -2.3
—
-1.3
V
VSS = -5.2V
VOH
ECL Output High Voltage
-1200 —
—
mV 50Ω to -2.0V
VOL
ECL Output Low Voltage
—
— -1600 mV 50Ω to -2.0V
VIN
On-Chip Terminations
35
—
65
Ω
Table 6: Power Dissipation
Symbol
Parameter
IVSS
Power Supply Current (VSS)
PD
Total Power Dissipation
Min Typ Max Units
Conditions
—
—
120
mA
VSS = -5.5V, IMOD = IBIAS =
0mA, MK/NMK open circuit
VSS = -5.5V, IMOD = IBIAS =
—
—
700
mW 0mA, RLOAD = 25Ω to GND,
MK/NMK terminated 50Ω to -2V
Table 7: Laser Driver DC Electrical Specifications
Symbol
Parameter
Min Typ
IBIAS
IMOD
Programmable Laser Bias Current
Programmable Modulation Current
2
—
2
—
VIB
Laser Bias Control Voltage
—
—
VIP
VOCM
Laser Modulation Control Voltage
Output Voltage Compliance
—
—
— GND -
3V
Max
100
100
VSS +
2.1
VSS +
2.1
—
Units
mA —
mA —
Conditions
V IBIAS = 50mA
V IMOD= 60mA
V VSS = -5.2V
Table 8: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min Typ
tR, tF
tSU
tH
Output Rise and Fall Times
Data to Clock Setup Time
Hold Time
—
—
—
50
20
50
Max
100
90
—
Units
ps
ps
ps
Conditions
25Ω load, 20%-80%,
20mA < IMOD < 60mA,
IBIAS = 60mA
—
—
Table 9: Package Thermal Specifications
Symbol
Parameter
Min Typ Max Units
θJCC
Thermal Resistance from Junction-to-Case —
25
— °C/W
Conditions
Ceramic Package
G52201-0, Rev 3.0
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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