UPS840E3/TR13 데이터 시트보기 (PDF) - Microsemi Corporation

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UPS840E3/TR13

POWERMITE 3™ SURFACE MOUNT 8 AMP 40 V SCHOTTKY RECTIFIER

Microsemi Corporation 

SCOTTSDALE DIVISION

UPS840e3

POWERMITE 3™ SURFACE MOUNT

8 AMP 40 V SCHOTTKY RECTIFIER

DESCRIPTION

APPEARANCE

The UPS840e3 offers a small and powerful surface mount package that is

RoHS compliant for a 40 Volt 8 Amp rated Schottky. These ratings are found

only in much larger packages. They are ideal for surface mount applications

that operate at high frequencies with their “hot carrier” features that provide

extremely fast switching. The very low thermal resistance of the patented

Powermite 3™ package design with a full metallic bottom and unique locking

tab act as an efficient heat path to a heat sink mounting permitting cooler operating

junction temperatures for minimal reverse leakage currents and lower power

loss. It is also ideal for automatic insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Powermite 3™

FEATURES

APPLICATIONS / BENEFITS

• Low profile package (<1.1 mm)

• Small footprint area of 32 mm2 (4.826 x 6.604 mm) or

0.05 in2 (0.190 x 0.260 inches) as also shown in

mounting pad details on last page

• Plastic package has Underwriters Laboratory

Flammability classification 94V-0

• Unique locking tab on bottom acts as integral efficient

heat path to heat sink (mounting substrate)

• Metal to silicon rectifier, majority carrier conduction

• RoHS compliant with e3 suffix part number

• High current capability with low forward voltage

• Guard-ring-die construction for transient protection

• Silicon Schottky (hot carrier) rectifier for minimal trr

and minimal reverse recovery voltage

• Elimination of reverse-recovery oscillations to

reduce need for EMI filtering

• For use in high-frequency switching power supplies,

inverters, free wheeling, charge pump circuits and

polarity protection applications

• Lower forward power loss and high efficiency

• Low inductive parasitics (<2nH) for minimal Ldi/dt

effects

• Robust package configuration for pick-and-place

handling

• Full-metallic bottom eliminates flux entrapment

MAXIMUM RATINGS

• Storage temperature (TSTG): -55 oC to +150oC

• Operating junction temperature (TJ ): -55 oC to +125oC

• Average forward rectified current (IO) @TC=100oC: 8.0

Amps

• Forward surge current (IFSM) 8.3 ms single half-sine

waveform superimposed on rated load (JEDEC

Method): 150 Amps

• Thermal resistance (RθJC): 2.5 oC/W

• Thermal resistance (RθJA): 65 oC/W on PCB with FR4

using 2 oz Copper and recommended mounting pad size

(see pad layout next page)

• Typical junction capacitance (CJ) at 1.0 MHz and VR of

4.0 Volts: 700 pF

• Solder temperatures: 260 ºC for 10 s (maximum)

MECHANICAL AND PACKAGING

• Terminals: Copper with annealed matte-Tin plating

for RoHS compliance solderable per MIL-STD-750

method 2026 (consult factory for Tin-Lead plating.)

• Polarity: Two-leads on side are internally

connected together for anode and backside is

cathode

• Marking: Body marked with S840•

• Molded epoxy package meets UL94V-0

• Weight: 0.072 grams (approximate)

• Tape & Reel packaging per EIA-481-2 with 16 mm

tape and 5000 units/ 13 inch reel)

• See package dimensions on last page

Copyright © 2007

10-15-07 REV D

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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