EPA018A-SOT23 데이터 시트보기 (PDF) - Excelics Semiconductor, Inc.
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EPA018A-SOT23 Datasheet PDF : 2 Pages
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Excelics
EPA018A-SOT23
PRELIMINARY DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 17.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +27dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT
2GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
Output Power at 1dB Compression
Vds=6V, Ids=30mA
G1dB
Gain at 1dB Compression
Vds=6V, Ids=30mA
NF
Noise Figure, Vds=2V, Ids=15mA
Vds=6V, Ids=30mA
IP3
Output 3rd Order Intercept Point
Vds=6V, Ids=30mA
f=2GHz
f=2GHz
f=2GHz
f=2GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
MIN
18.0
15.0
30
110-120
15-20
SOURCE
DRAIN
GATE
38
75.5
(Top View)
All Dimensions In Mils
TYP
20.0
17.0
0.7
0.9
27
MAX
UNIT
dBm
dB
dB
dBm
55 80 mA
Gm
Transconductance
Vds=3V, Vgs=0V
35 60
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=0.5mA
-9 -15
V
BVgs
Source Breakdown Voltage Igs=0.5mA
-7 -14
Rth
Thermal Resistance
450*
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
6V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
45mA
Igsf
Forward Gate Current
9mA
1.5mA
Pin
Input Power
16dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
330mW
280mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
V
oC/W
4-7
2-4
37-47
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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