UPA808TC 데이터 시트보기 (PDF) - NEC => Renesas Technology
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UPA808TC
NEC => Renesas Technology
UPA808TC Datasheet PDF : 16 Pages
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µPA808TC
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Ratings
Unit
VCBO
5
V
VCEO
3
V
VEBO
2
V
IC
P Note
tot
30
90 in 1 element
mA
mW
180 in 2 elements
Tj
150
°C
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
h Note 1
FE
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 20 mA
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
NF VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
NF VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz
MIN.
−
−
70
7.0
9.0
6.0
7.0
−
TYP.
−
−
110
9.0
11.0
7.5
8.5
1.3
MAX.
100
100
140
−
−
−
−
2.0
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
−
1.3
2.0
dB
−
0.4
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
3C
70 to 140
2
Data Sheet PU10130EJ01V0DS
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