UPA1950 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPA1950

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1950

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

IDSS

IGSS

VGS(off)

VDS = –12 V, VGS = 0 V

VGS = m8.0 V, VDS = 0 V

VDS = –10 V, ID = –1.0 mA

Forward Transfer Admittance

| yfs | VDS = –10 V, ID = –1.5 A

Drain to Source On-state Resistance

RDS(on)1 VGS = –4.5 V, ID = –1.5 A

RDS(on)2 VGS = –3.0 V, ID = –1.5 A

RDS(on)3 VGS = –2.5 V, ID = –1.5 A

RDS(on)4 VGS = –1.8 V, ID = –1.0 A

Input Capacitance

Ciss

VDS = –10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss f = 1.0 MHz

Turn-on Delay Time

td(on) VDD = –6.0 V, ID = –1.5 A

Rise Time

tr

VGS = –4.0 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = –10 V

Gate to Source Charge

QGS VGS = –4.0 V

Gate to Drain Charge

QGD ID = –2.5 A

Body Diode Forward Voltage

VF(S-D) IF = 2.5 A, VGS = 0 V

MIN. TYP. MAX. UNIT

–10 µA

–0.45

m10 µA

–1.5 V

1.0

S

105 130 mΩ

135 176 mΩ

160 205 mΩ

225 375 mΩ

220

pF

90

pF

40

pF

15

ns

80

ns

150

ns

120

ns

1.9

nC

0.5

nC

0.7

nC

0.86

V

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS(−)

0

τ

τ = 1µs

Duty Cycle ≤ 1%

RL

VDD

VGS(−)

VGS

Wave Form

10%

0

VDS(−)

90%

VDS

VDS

0

Wave Form

td(on)

90%

VGS

90%

10% 10%

tr td(off)

tf

ton

toff

D.U.T.

IG = −2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G15620EJ2V0DS

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