UF28100M 데이터 시트보기 (PDF) - M/A-COM Technology Solutions, Inc.

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UF28100M

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

M/A-COM Technology Solutions, Inc. 

UF28100M

RF Power MOSFET Transistor

100W, 100-500 MHz, 28V

M/A-COM Products

Released - 08.07

Typical Broadband Performance Curves

EFFICIENCY VS FREQUENCY

PIN=10W IDD =600 mA (Push pull device)

80

POWER OUTPUT VS SUPPLY VOLTAGE

PIN=10 W IDQ=600 mA F=500 MHz

120

100

70

80

60

60

40

50

20

40

100

200

300

400

500

FREQUENCY (MHz)

0

14

16

20

24

28

32

SUPPLY VOLTAGE (V)

POWER OUTPUT VS POWER INPUT

VDD =28 V IDQ =600 mA (Push pull device)

120

100

200MHz

400MHz

500MHz

80

60

300MHz

40

20

0

0

1

2

4

6

8

POWER INPUT (W)

10 12

2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

Commitment to produce in volume is not guaranteed.

changes to the product(s) or information contained herein without notice.

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