; TG25C/E/D GateCharacteristics
2
101
Peak Gate Voltage(10V)
5
2
100
5
−25℃
25℃
125℃
Average
GDiastteributioPPnoweae(kr G10aWte)
Gate Powe(r 1W)
2
Maximum Gate Voltage that will not trigger any unit
10−1
101 2
5 102 2
5 103 2
5
Gate Curren(t mA)
On State Current vs.
Maximum Power Dissipation
40
35
On-State Voltage
103
5
2
102
5
2
101
5
0
1
2
3
4
5
On-State Voltage(V)
On State Current vs.
Allowable Case Temperature
130
120
θ=180゜
30
25
20
15
10
2
360。
: Conduction Angle
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
110
100
90
80
70
2
360。
: Conduction Angle
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
5
60
0
0
5
10
15
20
25
30
RMS On-State Curren(t A)
50
0
5
10
15
20
25
30
RMS On-State Curren(t A)
Ambient temp. vs. RMS On-State Current
25
Conduction Angle 180゜
Apply following figures for
20
different conduction angles
θ:150゜:1.05
θ:120゜:1.16
θ: 90゜:1.27
15
θ: 60゜:1.44
θ: 30゜:1.75
F-40 Rth 2 95
Self convection
10
F-60 Rth 1 53
Self convection
F-40 3m/s
Rth 1 28
5
F-60 3m/s
Rth 0 65
(Rth:heat Sink Thermal Impedance)
0
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature(℃)
Surge On-State Current Rating
(Non-Repetitive)
250
200
Tj=25℃ start
150
100
50
60Hz
50Hz
0
100
2
5
101
2
Time(cycles)
5
102
Transient Thermal Impedance
6
6
5
5
F-40
Self convection
4
4
F-60
Self convection
3
3
F-40 3m/s
2
F-60 3m/s 2
Junction to case
1
1
0
0
10ー3
10ー2
10ー1
100
101
102
103
104
Time t(sec)
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