TFDS6502E 데이터 시트보기 (PDF) - Vishay Semiconductors
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TFDS6502E
Vishay Semiconductors
TFDS6502E Datasheet PDF : 17 Pages
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TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E
Vishay Semiconductor
Optoelectronic Characteristics (continued)
Tamb = 25_C, VCC = 2.6 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol Min. Typ. Max. Unit
Transmitter
IRED Operating Current R1*) = 7.2 Ω, VCC = 5.0 V
ID
0.4 0.55
A
Output Radiant Intensity VCC = 5.0 V, α = 0_, 15_
Ie
120 170 350 mW/sr
(see Figure 3)
Txd = High, SD = Low, R1 = 7.2 Ω
Output Radiant Intensity VCC = 5.0 V, α = 0_, 15_
Ie
Txd = Low, SD = High,
(Receiver is inactive as long as
SD = High) R1 = 7.2 Ω
0.04 mW/sr
Output Radiant Intensity,
Angle of Half Intensity
a
±24
°
Peak – Emission
Wavelength
lP
880
900 nm
Optical Output Pulse
Duration
Input pulse width 217 ns,
1.152 Mbit/s
topt
207 217 227
ns
Input pulse width 125 ns,
4 Mbit/s
topt
117 125 133
ns
Input pulse width 250 ns,
4 Mbit/s
topt
242 250 258
ns
Input pulse width t < 80 µs
topt
Input pulse width t ≥ 80 µs
t
µs
80
Optical Rise Time,
Fall Time
Optical Overshoot
tropt,
10
tfopt
40
ns
10
%
*) R1: control series resistor for current limitation
Document Number 82526
Rev. B1.6, 02–Nov–00
www.vishay.com
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