T2035H-600GTR 데이터 시트보기 (PDF) - STMicroelectronics
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T2035H-600GTR Datasheet PDF : 10 Pages
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Characteristics
T2035H Series
Figure 3.
IT(RMS) (A)
4.5
4.0
RMS on-state current vs ambient
temperature (epoxy printed
circuit board FR4 ecu = 35 µm)
α=180°
SCU=1cm²
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Tamb(°C)
25
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance vs pulse duration
K=[Zth/Rth]
1.E+00
Zth(j-c)
1.E-01
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
ITM(A)
100
On-state characteristics
(maximum values)
Tj=150°C
Tj=25°C
10
VTM(V)
Tj max. :
VT0 = 0.80 V
RD = 21 mW
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Figure 6. Surge peak on-state current vs
number of cycles
ITSM(A)
220
200
180
160
140
120
100
80
60
40
20
0
1
Non repetitive
Tj initial=25°C
Repetitive
Tc=127°C
Number of cycles
10
100
t=20ms
One cycle
1000
Figure 7. Non repetitive surge peak on-state
current (sinusoidal pulse width
tp<10 ms) and value of I²t
ITSM(A), I²t (A²s)
10000
dI/dt limitation: 50A/µs
Tj initial=25°C
Figure 8.
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature (typical values)
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1000
1.5
IH & IL
ITSM
1.0
100
0.01
0.10
tP(ms)
I²t
1.00
10.00
0.5
0.0
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140 160
4/10
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