SUB65P04-15 데이터 시트보기 (PDF) - Vishay Semiconductors
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SUB65P04-15 Datasheet PDF : 6 Pages
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SUP/SUB65P04-15
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
100
VGS = 10 V
ID = 30 A
1.5
1.0
10
TJ = 150 °C
0.5
0
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
100
IAV (A) at TA = 25 °C
10
IAV (A) at TA = 150 °C
1
0.1
0.00001 0.0001 0.001
0.01
0.1
1
tin (s)
Avalanche Current vs. Time
TJ = 25 °C
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
60
ID = 250 µA
55
50
45
40
35
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
Document Number: 71174
4
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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